december 2005 FDD8444 n-channel powertrench ? mosfet ?2005 fairchild semiconductor corporation FDD8444 r ev a (w) www.fairchildsemi.com 1 FDD8444 n-channel powertrench ? mosfet 40v, 50a, 5.2 m ? features ? r ds(on) = 4m ? (typ), v gs = 10v, i d =50a ? q g(10) = 89nc (typ), v gs =10v ? low miller charge ? low qrr body diode ? uis capability (single pulse/repetitive pulse) ? qualified to aec q101 ? rohs compliant applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? electronic transmission ? distributed power architecture and vrms ? primary switch for 12v systems l e a d f r e e m t a e l n t i o m p e n i d g s
FDD8444 n-channel powertrench ? mosfet FDD8444 re v a (w) www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 40 - - v i dss zero gate voltage drain current v ds = 32v v gs = 0v - - 1 a t j =150 c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na on characteristics v gs(th) gate to source threshold voltage v ds = v gs , i d = 250 a 2 2.5 4 v r drain to source on resistance i d = 50a, v gs = 10v - 4 5.2 m ? i d = 50a, v gs = 10v, t j = 175 c - 7.2 9.4 dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 6195 8240 pf c oss output capacitance - 585 780 pf c rss reverse transfer capacitance - 332 500 pf r g gate resistance f = 1mhz - 1.9 - ? q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 2 0 v i d = 50a i g = 1.0ma - 89 116 nc q g(5) total gate charge at 5v v gs = 0 to 5v - 43 56 nc q g(th) threshold gate charge v gs = 0 to 2v - 11 14.5 nc q gs gate to source gate charge - 23 - nc q gs2 gate charge threshold to plateau - 11 - nc q gd gate to drain ?miller? charge - 20 - nc ds(on) absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain to source voltage 40 v v gs gate to source voltage 20 v id drain current continuous (v gs =10v) (note1) 155 a continuous (v gs =10v,with r ja = 52 o c/w) 17.5 a pulsed figure 4 e as s i n g l e p u l s e a v a l a n c h e e n e r g y ( n o t e 2 ) 535 mj p d power dissipation 227 w derate above 25 o c 1.52 w/ o c t j , t stg operating and storage temperature -55 to +175 o c r jc thermal resistance, junction-to-case 0.66 o c/w r ja thermal resistance junction to ambient to-252, 1in 2 copper pad area 52 o c/w device marking device package reel size tape width quantity FDD8444 FDD8444 to-252aa 13? 12mm 2500 units
FDD8444 n-channel powertrench ? mosfet FDD8444 re v a (w) www.fairchildsemi.com 3 electrical characteristics t j = 25c unless otherwise noted switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units t (on) turn-on time v dd = 20v, i d = 50a v gs = 10v, r gs = 2 : - - 135 ns t d(on) turn-on delay time - 12 - ns t r turn-on rise time - 78 - ns t d(off) turn-off delay time - 48 - ns t f turn-off fall time - 15 - ns t off turn-off time - - 95 ns v sd source to drain diode voltage i sd =50a - - 1.25 v i sd =25a - - 1.0 v t rr reverse recovery time i f = 50a, di f /dt=100a/ p s--51ns q rr reverse recovery charge i f = 50a, di f /dt=100a/ p s--59nc notes: 1: package current limitation is 50a. 2: starting t j = 25 o c, l=0.67 mh , i as =40a this product has been designed to meet the extreme test conditi ons and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconductor products are manufactured, assemb led and tested under iso9000 and qs9000 quality systems certification.
FDD8444 n-channel powertrench ? mosfet FDD8444 re v a (w) www.fairchildsemi.com 4 typical characteristics figure 1. normalized power dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation muliplier t c , case temperature ( o c ) figure 2. 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180 v gs =10v current limited by package i d , drain current (a) t c , case temperature ( o c ) maximum continuous drain current vs case temperature figure 3. normalized maximum transient thermal impedance 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 single pulse d = 0.5 0.2 0.1 0.05 0.02 0.01 normalized thermal impedance, z jc t, rectangular pulse duration (s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc x r jc + t c p dm t 1 t 2 figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 single pulse i dm , peak current (a) t, rectangular pulse duration (s) 2000 v gs = 10v t c = 25 o c i = i 25 175 - t c 150 for temperatures above 25 o c derate peak current as follows: transconductance may limit current in this region
FDD8444 n-channel powertrench ? mosfet FDD8444 re v a (w) www.fairchildsemi.com 5 figure 5. 110100 0.1 1 10 100 1000 10us dc 10ms 1ms 100us i d , drain current (a) v ds , drain-source voltage (v) limited by r ds(on) area may be operation in this t c = 25 o c t j = max rated single pulse by package current limited forward bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 starting t j =25 o c starting t j =150 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 20 40 60 80 100 i d ,drain current(a) pulse duration=80 s duty cycle=0.5% max v dd = 5v t j = 175 o c t j = 25 o c t j = - 55 o c v gs , gate to source voltage (v) transfer characteristics figure 8. 0.0 0.3 0.6 0.9 1.2 1.5 0 20 40 60 80 100 v gs =10v 5.0v 4.0v 4.5v pulse duration =80 s duty cycle =0.5% max i d , drain current (a) v ds , drain to source voltage (v) t j =25 o c saturation characteristics figure 9. 45678910 4 5 6 7 8 9 10 11 12 i d =20a pulse duration=80 s duty cycle=0.5% max t j = 25 o c t j = 175 o c r ds(on) , drain to source on-resistance ( m ? ) v gs , gate to source voltage (v) drain to source on-res i stance vs gate to source voltage figure 10. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 pulse duration =80 s duty cycle =0.5% max i d = 50a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) normalized drain to source on resistance vs junction temperature typical characteristics
FDD8444 n-channel powertrench ? mosfet FDD8444 re v a (w) www.fairchildsemi.com 6 figure 11. -80 -40 0 40 80 120 160 200 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v gs = v ds i d = 250 a normalized gate threshold voltage t j , junction temperature ( o c ) normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature -80 -40 0 40 80 120 160 20 0 0.90 0.95 1.00 1.05 1.10 1.15 i d =250 a normalized drain to source breakdown voltage t j , junction temperature ( o c ) figure 13. 0.1 1 10 100 1000 10000 c rss c oss c iss f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) 40 capacitance vs drain to source voltage figure 14. 0 20406080100 0 1 2 3 4 5 6 7 8 9 10 v dd =25v v dd =15v v dd =20v i d =50a v gs ,gate to source voltage(v) q g ,gate charge (nc) gate charge vs gate to source voltage typical characteristics
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